features power dissipation marking:p1 maximum ratings (t a =25 unless otherwise noted) symbol parameter value units v cbo collector-base voltage -80 v v ceo collector-emitter voltage -60 v v ebo emitter-base voltage -5 v i c collector current ?continuous -1 a p c collector power dissipation 0.5 w t j junction temperature 150 t stg storage temperature -65-150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min max unit collector-base breakdown voltage v (br)cbo i c =-100 a , i e =0 -80 v collector-emitter breakdown voltage v (br)ceo * i c = -10ma , i b =0 -60 v emitter-base breakdown voltage v (br)ebo i e =-100 a, i c =0 -5 v collector cut-off current i cbo v cb =-60 v , i e =0 -0.1 a emitter cut-off current i ebo v eb =-4 v , i c =0 -0.1 a collector- emitter cut-off current i ces v ces =-60 v, i e =0 -0.1 a dc current gain h fe * v ce =-5v, i c = -1ma v ce =-5v, i c = -500ma v ce =-5v, i c = -1a v ce =-5v, i c = -2a 100 100 80 15 300 collector-emitter saturation voltage v ce(sat) * i c =-500 ma, i b = -50ma i c =-1a, i b = -100ma -0.3 -0.6 v base-emitter saturation voltage v be(sat) * i c =-1a, i b = -100ma -1.2 v base-emitter voltage v be * v ce =-5v, i c = -1a -1 v transition frequency f t v ce = -10v, i c =- 50ma f =100mhz 150 mhz collector output capacitance c ob v cb =-10v, f=1mhz 10 pf *pulse width=300s. duty cycle 2% sot-89 1. base 2. collector 3. emitter 1 2 3 FCX591 transistor (pnp) 1 date:2011/05 www.htsemi.com semiconductor jinyu
typical characteristics FCX591 2 date:2011/05 www.htsemi.com semiconductor jinyu
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